Energy storage
Foshan Sanshui signed a 2 billion graphite material industrialization project
Seetao 2024-09-11 14:34
  • The implementation of the project will help to improve Foshan's technological level in the field of semiconductor materials
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On September 9, 2024, Sanshui District, Foshan City ushered in a major industrial investment project: the official signing of the core process project of ultra-high purity isostatic graphite material industrialization. The total investment scale of the project is as high as 2 billion yuan, of which the investment in fixed assets accounts for half of the country, reaching 1 billion yuan. It is expected that after the project is fully put into operation, the annual output value of its terminal products will sprint to about 1.5 billion yuan.

The project focuses on the development and production of two core products: isostatically pressed graphite materials with top purity, and semiconductor-grade ultra-high-purity products customized for precision machining needs. These high-tech products are widely used in cutting-edge fields, such as wide bandgap semiconductors and the traditional silicon-based semiconductor industry, and are indispensable key links in the semiconductor industry chain.

The successful settlement of this project not only marks a major breakthrough in the semiconductor and integrated circuit industry in Sanshui area, but also injects strong impetus into the optimization and upgrading of the overall industrial structure of Foshan. Through the implementation of this project, it will effectively promote the close integration of upstream and downstream resources in the semiconductor industry, accelerate the formation of a complete industrial chain from raw material supply to terminal product manufacturing, promote the development of regional industries in the direction of high-end and clustering, and finally build a vibrant and competitive semiconductor and integrated circuit industry cluster.Editor/Jiang Mingyue

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